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Product Detailed Parameters
- Description：IGBT MOD 1200V 50A 285W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Power - Max：285 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：2.8 nF @ 25 V
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Overview
The FF50R12RT4HOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the TRENCHSTOP RT4 series. It features a half-bridge configuration with integrated anti-parallel diodes. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage of 1.85 V and a forward voltage of 1.7 V at 25°C. The module utilizes EconoPACK™ 3 packaging for screw mounting and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Integrates TRENCHSTOP RT4 technology for optimized switching performance in hard-switching applications.
- Features an isolated housing design suitable for flange mounting configurations.
- Combines high-speed IGBTs with fast recovery diodes in a compact power module structure.
Applications
- Industrial motor drives and inverters
- Uninterruptible power supply (UPS) systems
- High-frequency switching power supplies
Procurement Notes
Verify the specific suffix HOSA1 against official Infineon documentation to confirm compliance with RoHS directives and REACH SVHC requirements. Ensure that the ordering code matches the exact technical specifications required for the target application, as minor variations in suffixes may indicate differences in packaging or material composition.
Selection Notes
Select this component when a 1200 V rating and 50 A current capacity are required in an EconoPACK™ 3 form factor. Consider the 175°C maximum junction temperature for thermal management designs. Verify that the gate drive circuitry aligns with the standard IGBT input characteristics provided in the datasheet.
Part Context
This module is part of Infineon's broader TRENCHSTOP RT4 portfolio, which focuses on improving efficiency in industrial power conversion. It shares the EconoPACK™ 3 mechanical footprint with other modules in the series, facilitating standardized thermal interface designs across different current ratings within the same product family.
Replacement Considerations
Publicly confirmed substitute part numbers for FF50R12RT4HOSA1 were not identified in the available source data. Cross-referencing with other RT4 series variants requires careful verification of pinout compatibility and thermal resistance values.
