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Product Detailed Parameters
- Description：IGBT MODULE 1200V 600A
- Series：C
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 600A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：850 A
- Power - Max：2800 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：-
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Overview
The FF600R12KE3NOSA1 is a dual IGBT module manufactured by Infineon Technologies. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous DC collector current (IC) of 850 A at Tc=25°C, with a nominal current rating of 600 A. The typical collector-emitter saturation voltage (VCEsat) is 1.7 V at Tvj=25°C. Total power dissipation (Ptot) reaches 2.8 kW at Tc=25°C. The device operates within a junction temperature range of -40°C to +150°C and utilizes the IHM130 package.
Feature Summary
- Dual configuration integrating two independent IGBTs and diodes in a single housing
- High thermal conductivity design for efficient heat transfer from junction to case
- Robust short-circuit capability supporting industrial technology standards
Applications
- Industrial motor drives
- Medium-power inverters
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with relevant safety and environmental regulations applicable to your region before finalizing procurement orders.
Selection Notes
Evaluate thermal resistance values against your heatsink capabilities to ensure adequate cooling. Verify gate drive requirements match the specified threshold voltages and charge parameters. Consider the repetitive peak forward current ratings when designing protection circuits for inductive loads.
Part Context
This component belongs to the IGBT3-E3 series of silicon modules. It represents a high-power discrete solution designed for demanding switching applications. The module integrates fast recovery diodes alongside the IGBTs to facilitate efficient commutation in bridge configurations.
Replacement Considerations
FF600R12KE3NOSA1 serves as an alternative designation for the base FF600R12KE3 model. Cross-reference pinouts and thermal characteristics carefully when substituting with other 1200V 600A class modules.
