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Product Detailed Parameters
- Description：IGBT MOD 1200V 1060A 4050W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 600A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：1060 A
- Power - Max：4050 W
- Current - Collector Cutoff (Max)：3 mA
- Input Capacitance (Cies) @ Vce：37 nF @ 25 V
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Overview
The FF600R12ME4CBOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an emitter-controlled diode. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 600 A at a case temperature of 100 °C. The module incorporates an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C for thermal monitoring. Packaged in the EconoDUAL™3 standard housing, it provides high power density with an isolated copper base plate. The component is qualified for industrial applications according to IEC standards.
Feature Summary
- Integrates Trench/Fieldstop IGBT4 technology with an emitter-controlled diode for optimized switching performance.
- Includes an embedded NTC thermistor for precise junction temperature monitoring within the module.
- Features an isolated copper base plate designed for efficient heat dissipation and electrical safety.
- Constructed within the compact EconoDUAL™3 housing to maximize power density.
Applications
- High-power converters
- Motor drives
- Servo drives
- UPS systems
- Wind turbines
Procurement Notes
Verify the specific ordering suffix BOSA1 against official documentation to confirm packaging details. Confirm that the component meets all relevant IEC 60747, 60749, and 60068 qualification requirements for the intended industrial application environment before finalizing procurement.
Selection Notes
Select this module for designs requiring a 1200 V rating and 600 A continuous current capability. Ensure the cooling system can maintain the case temperature at or below 100 °C to support the rated current. Verify that the PCB layout accommodates the specific terminal configuration and mounting torque specifications defined in the package outlines.
Part Context
This component belongs to the Infineon EconoDUAL™3 series, which utilizes Trench/Fieldstop IGBT4 technology. The series is engineered for high-efficiency power conversion in demanding industrial environments. The module integrates both the switching device and the freewheeling diode into a single standardized package.
Replacement Considerations
Consult official Infineon cross-reference documentation for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and mechanical dimensions to fit existing PCB layouts and cooling structures without modification.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature (Tvj op) is 150 °C.
How is the internal gate resistor specified?
The internal gate resistor (RGint) is typically 1.2 Ω at a junction temperature of 25 °C.
What insulation test voltage is required?
An isolation test voltage of 2.5 kV RMS at 50 Hz for 1 minute is required between terminals and the base plate.
