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Product Detailed Parameters
- Description：IGBT MODULE 1700V 4300W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 600A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：-
- Power - Max：4300 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：54 nF @ 25 V
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Overview
The FF600R17KE3B2NOSA1 is a dual IGBT module with integrated anti-parallel diodes, designed for inverter applications. It features a collector-emitter voltage of 1700 V and a continuous DC collector current of 950 A at 25°C. The device utilizes TRENCHSTOP™ IGBT3 technology and is housed in the IHM130 package. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.45 V at 600 A and 15 V gate drive. The module incorporates an AlSiC baseplate and AlN internal insulation to support high thermal performance and robust operation under switching conditions.
Feature Summary
- Dual configuration integrating two independent IGBT switches with associated anti-parallel diodes within a single housing.
- Utilizes TRENCHSTOP™ IGBT3 technology to optimize switching losses and conduction characteristics.
- Constructed with an Aluminum Silicon Carbide (AlSiC) baseplate to enhance thermal conductivity and mechanical stability.
- Features internal aluminum nitride (AlN) insulation to provide basic isolation between terminals and the heatsink.
Applications
- Industrial motor drives
- Medium-power inverters
- Uninterruptible power supplies
Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm that the received hardware matches the specific ordering code FF600R17KE3B2NOSA1. Ensure compliance with RoHS3 directives and verify that storage temperatures remain within the specified -40°C to 125°C range prior to installation.
Selection Notes
Select this module for applications requiring high current density and robust thermal management. The AlSiC baseplate supports environments with significant thermal cycling. Ensure the cooling system can maintain the case temperature below 80°C to sustain the rated 600 A continuous current. Verify that the gate driver provides ±15 V swing for optimal switching performance.
Part Context
This component belongs to the FF600R17KE3 series of industrial IGBT modules. It represents a generation utilizing TRENCHSTOP™ IGBT3 technology, which offers improved efficiency compared to previous iterations. The module is part of Infineon's portfolio for medium to high-power conversion systems.
Replacement Considerations
FF600R17IE4D_B2 is listed as a manufacturer-recommended alternative. Evaluate pin compatibility and thermal resistance differences before substitution.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current is 1200 A for a pulse duration of 1 ms.
What is the isolation test voltage of the module?
The isolation test voltage is 4.0 kV RMS at 50 Hz for one minute.
What is the typical forward voltage of the integrated diode?
The typical forward voltage is 1.60 V at 600 A and 25°C junction temperature.
