FF600R17KE3NOSA1

Overview

The FF600R17KE3NOSA1 is a dual IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3-E3 technology. It features two independent switches rated for a collector-emitter voltage of 1700 V and a continuous DC collector current of 900 A at 25°C. The maximum repetitive peak collector current is 1200 A. Key electrical parameters include a typical collector-emitter saturation voltage of 2.40 V at 600 A and 25°C, an internal gate resistance of 2.1 Ω, and an input capacitance of 55.0 nF. The module operates within a junction temperature range of -40°C to 125°C.

Feature Summary

• Incorporates Trenchstop IGBT3-E3 technology for optimized switching performance.
• Features a copper baseplate with aluminum oxide internal insulation for thermal management and isolation.
• Designed for high power density with low stray inductance.

Applications

• Industrial motor drives
• Medium-power inverters
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and terminal configuration. Ensure that the component meets RoHS3 compliance requirements for the intended manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity before procurement.

Selection Notes

Select this module based on its 1700 V blocking capability and 900 A continuous current rating. Evaluate the thermal resistance values to ensure adequate heatsinking for the expected power dissipation. Confirm that the gate drive circuitry can accommodate the specified gate threshold voltage and charge requirements for reliable switching.

Part Context

This component belongs to the FF600R17 series of IGBT modules. It utilizes the AG-PRIME2 housing format. The product line is designed for industrial applications requiring robust power switching capabilities within a compact footprint.

Replacement Considerations

FF650R17IE4BOSA1