SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FF600R17KF6CB2NOSA1 is a 1700 V IGBT module featuring low-loss second-generation IGBTs and a soft Emitter Controlled Diode. It provides a continuous DC collector current of 600 A at TC=80°C, with a repetitive peak current of 1200 A. The module exhibits a maximum collector-emitter saturation voltage of 3.60 V at Tvj=125°C and a forward diode voltage of 2.50 V under the same conditions. Switching losses are rated at 270 mJ for turn-on and 220 mJ for turn-off per pulse at 900 V. Thermal resistance from junction to case is 26.0 K/kW for the IGBT and 50.0 K/kW for the diode.
Verify the exact ordering suffix against official Infineon documentation before purchase. Confirm that the component matches the specific technical requirements for your application. Check for any recent updates to the datasheet revision or mounting instructions. Ensure compliance with RoHS standards as specified in the manufacturer's environmental classification.
Select this module for applications requiring high voltage blocking capability and robust short-circuit performance. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values. Consider the gate threshold voltage and internal gate resistor when designing the driver circuitry. Verify that the operating temperature range meets the system's environmental constraints.
This component belongs to the FF600R17 series of IGBT modules manufactured by Infineon Technologies. It utilizes the KF6C package design, which is optimized for industrial power electronics applications. The module integrates both the IGBT switch and the anti-parallel diode in a single housing for compact system integration.
FF600R17KF6CB2NOSA2 is listed as a direct replacement option.