FF600R17ME4BOSA1

Overview

The FF600R17ME4BOSA1 is an EconoDUAL™3 half-bridge IGBT module utilizing Trench/Fieldstop IGBT4 technology and an emitter-controlled diode. It features a collector-emitter voltage (VCES) of 1700 V, a nominal continuous DC collector current (ICDC) of 600 A at 108 °C case temperature, and a repetitive peak collector current (ICRM) of 1200 A. The typical saturation voltage (VCEsat) is 1.95 V at 25 °C junction temperature, rising to 2.45 V at 150 °C. The integrated NTC thermistor has a rated resistance of 5 kΩ at 25 °C. The module provides high power density with an isolated copper base plate and standard housing.

Feature Summary

• High current density with low saturation voltage
• Positive temperature coefficient for VCE,sat
• Isolated base plate construction
• Integrated NTC thermistor

Applications

• High-power converters
• Wind turbines

Procurement Notes

Verify the specific BOSA1 suffix against official Infineon documentation to confirm exact packaging or marking variations. Ensure compatibility with recommended gate drivers listed in the manufacturer's GDFinder tool. Confirm RoHS compliance status and check for any REACH SVHC declarations prior to final procurement authorization.

Selection Notes

Select this component for applications requiring 1700 V blocking capability and up to 600 A continuous current. Verify thermal management requirements using the provided RthJC values of 0.0369 K/W per IGBT and 0.0730 K/W per diode. Ensure the operating junction temperature remains within the -40 °C to 150 °C range during switching conditions.

Part Context

This module belongs to the Infineon EconoDUAL™3 series, designed for industrial applications. It utilizes Trench/Fieldstop IGBT4 technology combined with an emitter-controlled diode. The product is qualified according to IEC 60747, 60749, and 60068 standards for industrial use.

Replacement Considerations

FF600R17ME4_B11