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Product Detailed Parameters
- Description：IGBT MODULE 1700V 4150W
- Series：PrimePACK™2
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 650A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：-
- Power - Max：4150 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：54 nF @ 25 V
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Overview
The FF650R17IE4DB2BOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4-E4 technology. It features a PrimePACK™2 package with an integrated NTC thermistor and copper base plate. The device supports a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC nom) of 650 A at TC = 100°C. It handles a repetitive peak collector current (ICRM) of 1300 A and has a total power dissipation of 4.15 kW. The module operates within a junction temperature range of -40°C to 150°C.
Feature Summary
- Extended operation temperature capability up to 150°C
- Enlarged diode optimized for regenerative operation
- High DC stability and high current density design
- Low switching losses combined with low VCEsat
Applications
- 3-Level Applications
- Auxiliary Inverters
- High Power Converters
- Motor Drives
- Traction Drives
- Wind Turbines
Procurement Notes
Verify the specific ordering suffix BOSA1 against official documentation to confirm compliance details and material content. Ensure that the PrimePACK™2 mechanical dimensions match the target heatsink interface. Confirm thermal paste specifications for the required case-to-heatsink thermal resistance values during assembly.
Selection Notes
Select this component for high-power applications requiring robust regenerative capabilities and extended thermal operation. Evaluate the 18 nH stray inductance for circuit layout optimization. Consider the internal gate resistor value when designing the driver circuit to manage switching speeds and electromagnetic interference effectively.
Part Context
This module belongs to the PrimePACK™2 series, designed for industrial and traction applications. It integrates IGBT4-E4 technology with an enlarged freewheeling diode. The package includes an NTC thermistor for precise junction temperature monitoring and utilizes a copper base plate for efficient heat dissipation.
Replacement Considerations
FF650R17IE4D_B2
FAQ
What is the maximum repetitive peak reverse voltage for the integrated diode?
The maximum repetitive peak reverse voltage (VRRM) for the diode is 1700 V at a junction temperature of 25°C.
What is the isolation test voltage rating of the module?
The isolation test voltage (VISOL) is rated at 4.0 kV RMS for 1 minute at 50 Hz.
What is the typical rated resistance of the integrated NTC thermistor?
The rated resistance (R25) of the NTC thermistor is 5.00 kΩ at a case temperature of 25°C.
