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Product Detailed Parameters
- Description：FF650R17 - INSULATED GATE BIPOLA
- Series：PrimePACK™2
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Half Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：-
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：650 A
- Power - Max：-
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：54000 pF @ 25 V
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Overview
The FF650R17IE4PBOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 650 A at TH = 65°C. The maximum repetitive peak collector current (ICRM) is 1300 A. The typical collector-emitter saturation voltage (VCEsat) is 2.00 V at Tvj = 25°C. The module incorporates an integrated NTC thermistor with a rated resistance (R25) of 5.00 kΩ. It operates within a junction temperature range of -40°C to 150°C and includes pre-applied thermal interface material.
Feature Summary
- High short-circuit capability and surge current robustness
- Integrated NTC temperature sensor for thermal monitoring
- Pre-applied thermal interface material for simplified assembly
- High insulation strength with 4 kV AC isolation
Applications
- High power converters
- Motor drives
- Wind turbines
Procurement Notes
Verify the specific BOSA1 suffix against official documentation to confirm exact manufacturing lot or regional compliance details. Confirm that the pre-applied thermal interface material remains intact during transit. Ensure mounting torque specifications are strictly followed to maintain electrical isolation and thermal performance integrity.
Selection Notes
Select this component for high-power industrial applications requiring robust short-circuit handling. Evaluate the thermal resistance values provided in the datasheet against the system's heatsink capabilities. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Verify gate drive requirements match the specified internal gate resistor and charge characteristics.
Part Context
This module belongs to the PrimePACK™2 series, designed for high current density and reliability. It utilizes Infineon's Trenchstop IGBT4 technology combined with an emitter-controlled diode. The package provides high creepage and clearance distances, suitable for demanding industrial environments where compact size and high performance are critical.
Replacement Considerations
Consult official cross-reference lists for compatible modules. Verify pinout compatibility and mechanical dimensions before substitution. Ensure replacement parts meet the same voltage, current, and thermal specifications.
