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FF6MR12KM1HHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF6MR12KM1HHPSA1
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF6MR12KM1HHPSA1
FET, MOSFET Arrays Overview
The FF6MR12KM1HHPSA1 is a CoolSiC Trench MOSFET half-bridge module from Infineon's 62 mm C-Series. It features a 1200 V drain-source voltage and an implemented drain current of 180 A, with a repetitive peak current rating of 360 A. The device utilizes screw mounting and provides high current density with low switching losses. Electrical characteristics include a maximum on-resistance of 11.8 mΩ at 175 °C and a gate threshold voltage ranging from 3.45 V to 5.15 V. Thermal management relies on a junction-to-case resistance of 0.188 K/W per switch.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC Trench MOSFET technology for high efficiency
- Provides 4 kV AC insulation for enhanced safety
- Designed for industrial applications with robust qualification
FET, MOSFET Arrays Applications
- Uninterruptible Power Supply (UPS) systems
- Solar energy applications
- DC/DC converters
- Energy storage systems
- Electric vehicle DC chargers
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix HHP against official documentation to confirm mechanical or electrical variations. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Ensure the ordering code matches the exact package type and terminal configuration required for the target application design.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring high-frequency switching and compact power density. Evaluate thermal resistance values to ensure adequate heatsinking for the intended operating temperature range. Consider the recommended gate voltage settings to optimize switching performance and minimize conduction losses during operation.
FET, MOSFET Arrays Part Context
This module belongs to Infineon's 62 mm C-Series lineup, designed for medium-power industrial applications. It integrates two N-channel SiC MOSFETs in a half-bridge configuration. The series emphasizes high reliability and low stray inductance to support efficient power conversion in demanding environments.
FET, MOSFET Arrays Replacement Considerations
Consult official replacement guides for compatible modules within the same 62 mm form factor. Verify pinout compatibility and thermal interface requirements before substituting.
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