FF6MR12W2M1PB11BPSA1

Description：MOSFET 2N-CH 1200V 200A
Series：CoolSiC™+

SKU:83a2721b7df8 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF6MR12W2M1PB11BPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V 200A. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF6MR12W2M1PB11BPSA1

Description：MOSFET 2N-CH 1200V 200A
Series：CoolSiC™+
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：200A (Tj)
Rds On (Max) @ Id, Vgs：5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id：5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs：496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：14700pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF6MR12W2M1PB11BPSA1

FF6MR12W2M1PB11BPSA1

FET, MOSFET Arrays Overview

The FF6MR12W2M1PB11BPSA1 is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It features two N-channel silicon carbide switches with a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 200 A at 25°C. The module exhibits a typical on-resistance of 5.63 mOhms and operates within a junction temperature range of -40°C to +150°C. Key switching parameters include a turn-on delay of 20.4 ns, turn-off delay of 62.6 ns, rise time of 18.7 ns, and fall time of 30 ns. It utilizes screw mounting in an EasyPACK™ package.

FET, MOSFET Arrays Feature Summary

Utilizes silicon carbide (SiC) technology for high-efficiency power conversion
Integrated half-bridge configuration with dual N-channel MOSFETs
Designed for robust operation under high thermal stress conditions

FET, MOSFET Arrays Applications

Uninterruptible Power Supplies (UPS)
Energy Storage Systems (ESS)
Solar Inverters
Electric Vehicle Chargers

FET, MOSFET Arrays Procurement Notes

Verify the exact part number suffix against official Infineon documentation, as variations such as BPSA1 or BOMA1 may indicate different packaging or specific manufacturing lot attributes. Confirm RoHS compliance status and ensure the ordering quantity matches the manufacturer's standard tray specifications. Cross-reference datasheet revisions to guarantee compatibility with existing design requirements.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high voltage handling and low conduction losses. The 1.2 kV rating suits medium-voltage systems, while the 200 A current capacity supports substantial power loads. Evaluate thermal management needs based on the specified operating temperature limits and ensure gate drive voltages align with the module's threshold characteristics.

FET, MOSFET Arrays Part Context

This module belongs to Infineon’s CoolSiC™ product family, specifically designed for advanced power electronics. It is housed in the EasyPACK™ form factor, which facilitates efficient heat dissipation and compact integration into modern power conversion architectures. The series targets industrial and automotive sectors demanding high reliability.