FF800R12KE7EHPSA1

Overview

The FF800R12KE7EHPSA1 is a 62 mm C-Series IGBT module featuring TRENCHSTOP™ IGBT7 technology and an emitter-controlled diode. It provides a collector-emitter voltage of 1200 V, a continuous DC collector current of 800 A at 90 °C case temperature, and a repetitive peak current of 1600 A. The saturation voltage is typically 1.50 V at 25 °C and 1.75 V at 175 °C. Operating junction temperatures range from -40 °C to 175 °C. The module includes an isolated copper base plate with 4 kV AC insulation and high creepage distances.

Feature Summary

• TRENCHSTOP™ IGBT7 technology with positive temperature coefficient for saturation voltage
• Emitter-controlled diode with low reverse recovery energy
• High power density in a standard 62 mm housing
• Isolated base plate with superior insulation coordination

Applications

• Servo drives
• Solar applications
• UPS systems
• Motor drives
• Commercial agriculture vehicles

Procurement Notes

Verify the specific suffix EHPSA1 against official Infineon documentation to confirm pinout and terminal configuration. Ensure compliance with industrial qualification standards such as IEC 60747 and IEC 60068 before integration into final designs.

Selection Notes

Select this component for high-power density requirements within the 62 mm form factor. Consider the thermal resistance values and operating temperature limits when designing heatsinking solutions for continuous or pulsed load conditions.

Part Context

This module belongs to the 62 mm C-Series lineup, designed for high-performance industrial applications. It utilizes advanced silicon technology to deliver robust power cycling capability and mechanical stability compared to previous generations.

Replacement Considerations

FF800R12KE7PHPSA1