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The FF800R12KL4CNOSA1 is a 1200 V IGBT module featuring two independent switches and an integrated soft Emitter Controlled Diode. It utilizes low-loss second-generation IGBT technology. The continuous DC collector current (IC) reaches 1250 A at TC = 25°C and 800 A at TC = 80°C, with a repetitive peak current of 1600 A. Maximum power dissipation is 5000 W at TC = 25°C. Collector-emitter saturation voltage (VCEsat) is 2.60 V max at IC = 800 A and Tvj = 125°C. Gate-emitter peak voltage is +/-20 V. Input capacitance (Cies) is 56 nF. Thermal resistance junction-to-case is 25 K/kW per IGBT and 42 K/kW per diode.
Verify the component authenticity by checking the manufacturer's part number against official datasheets. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS standards and verify the isolation test voltage requirements for your specific application environment before finalizing procurement.
Select this module for applications requiring high current handling up to 1250 A and robust short-circuit protection. Consider the thermal resistance values when designing heatsink solutions. Verify that the gate drive voltage limits align with the specified +/-20 V maximum rating to ensure reliable operation within the safe operating area.
This component belongs to the FF800R12 series of industrial IGBT modules from Infineon Technologies. It is designed for high-power conversion tasks where efficiency and reliability are critical. The module integrates both the switching element and the freewheeling diode into a single package to simplify circuit design and improve system performance.
FF900R12IE4BOSA1