FF800R17KE3NOSA1

$711.61

Description：IGBT MODULE 1700V 4450W
Series：-

SKU:e489352ca2b0 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT MODULE 1700V 4450W
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：2 Independent
Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 800A
Input：Standard
NTC Thermistor：No
Operating Temperature：-40°C ~ 125°C
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Voltage - Collector Emitter Breakdown (Max)：1700 V
Current - Collector (Ic) (Max)：-
Power - Max：4450 W
Current - Collector Cutoff (Max)：5 mA
Input Capacitance (Cies) @ Vce：72 nF @ 25 V

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FF800R17KE3NOSA1

Overview

The FF800R17KE3NOSA1 is a single IGBT inverter module from Infineon Technologies. It features a collector-emitter voltage (VCES) of 1700 V and a continuous DC collector current (IC) of 800 A at TC = 80°C, with a maximum rating of 1150 A at TC = 25°C. The repetitive peak collector current reaches 1600 A. Total power dissipation is rated at 4.45 kW at TC = 25°C. The integrated diode supports an 800 A forward current and a 1700 V repetitive peak reverse voltage. Key electrical parameters include a typical VCE(sat) of 2.00 V at 25°C and 2.40 V at 125°C for the IGBT, and a typical VF of 1.80 V at 25°C for the diode.

Feature Summary

High-voltage capability suitable for demanding industrial power conversion applications
Integrated fast recovery diode providing robust commutation characteristics
Designed for screw-mount installation with standardized terminal connections

Applications

Industrial motor drives and frequency converters
Uninterruptible power supplies (UPS)
Induction heating systems

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revision status prior to integration. Ensure proper handling procedures are followed due to semiconductor sensitivity. Cross-reference ordering suffixes to match exact package and thermal specifications required by the design.

Selection Notes

Evaluate thermal resistance values against the specific heatsink design to ensure junction temperature remains within operational limits. Consider gate resistor selection to optimize switching losses versus electromagnetic interference. Verify isolation voltage requirements align with system safety standards. Assess short-circuit withstand capability for protection circuit design.

Part Context

This component belongs to the TRENCHSTOP IGBT3 family, representing a generation of silicon-based power modules optimized for efficiency and ruggedness. It utilizes standard copper baseplate construction for effective heat dissipation. The module integrates both N-channel IGBT and anti-parallel diode chips within a single insulated housing.