FF800R17KF6CB2NOSA1

Overview

The FF800R17KF6CB2NOSA1 is a dual IGBT module from the IHM-A series, utilizing low-loss IGBT2 technology and an emitter-controlled diode. It features a collector-emitter voltage of 1700 V and a nominal continuous DC collector current of 800 A at TC = 80°C. The maximum repetitive peak collector current reaches 1600 A for 1 ms pulses. Total power dissipation is rated at 6.25 kW at TC = 25°C. The module operates within a junction temperature range of -40°C to 125°C and includes internal gate resistors.

Feature Summary

• Incorporates low-loss IGBT2 technology paired with an emitter-controlled diode for optimized switching performance.
• Features a robust aluminum nitride (AlN) internal basic insulation structure.
• Includes integrated internal gate resistors to simplify driver circuit design.

Applications

• Industrial motor drives
• Medium-power inverter systems
• Uninterruptible power supplies

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation before purchase. Confirm that the component matches the specific electrical ratings required for your application. Check for any updated datasheet revisions or alternative package variants. Ensure compatibility with existing thermal management solutions.

Selection Notes

Select this module based on its 1700 V blocking capability and 800 A continuous current rating. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Consider the stray inductance specifications when designing the PCB layout. Verify that the operating junction temperature remains within the specified limits during peak loads.

Part Context

This component belongs to the IHM-A module family designed for industrial applications. It represents a generation of modules focusing on reduced switching losses through advanced chip technology. The packaging provides a standardized footprint for mounting onto chassis or printed circuit boards.

Replacement Considerations

FF800R17KP4B2NOSA2