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The FF900R12IE4PBOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It features a PrimePACK™2 housing with pre-applied thermal interface material. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V, a continuous DC collector current (IC nom) of 900 A at TH = 60°C, and a repetitive peak collector current (ICRM) of 1800 A. The saturation voltage (VCEsat) ranges from 1.75 V to 2.50 V depending on junction temperature. Thermal resistance from junction to heatsink is 48.1 K/kW for the IGBT and 87.2 K/kW for the diode.
Verify component authenticity by checking the UL approval mark (E83335) and RoHS compliance status. Confirm the presence of the pre-applied thermal interface material and ensure proper storage conditions are maintained according to application notes. Validate terminal torque specifications during installation to maintain reliable electrical connections.
Select this module for applications requiring high current density and robust short-circuit withstand capability. Ensure the cooling system can handle the specified thermal resistance values. Verify that the gate drive circuitry supports the required ±15 V operation and internal gate resistor characteristics for optimal switching performance.
This component belongs to the PrimePACK™2 series, designed for industrial applications. It integrates fourth-generation trench field-stop IGBTs with emitter-controlled diodes. The module provides a compact solution with high power density, suitable for demanding environments where reliability and efficiency are critical.
FF900R12IE4P
The maximum baseplate operating temperature (TBPmax) is 125 °C.
Yes, the module includes an integrated NTC temperature sensor with a rated resistance of 5.00 kΩ at 25 °C.
The module stray inductance (LsCE) is typically 18 nH.