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Product Detailed Parameters
- Description：IGBT MOD 1200V 900A 5100W
- Series：PrimePACK™2
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 900A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：900 A
- Power - Max：5100 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：54 nF @ 25 V
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Overview
The FF900R12IE4VBOSA1 is a half-bridge IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4 technology and an Emitter Controlled 4 diode. It features a PrimePACK™2 housing with a copper baseplate and integrated NTC thermistor. The device supports a collector-emitter voltage of 1200 V and a continuous DC collector current of 900 A at 100°C case temperature. Key electrical parameters include a maximum repetitive peak collector current of 1800 A, a typical saturation voltage of 1.75 V at 25°C, and a total power dissipation of 5.1 kW. The module operates within a junction temperature range of -40°C to 150°C.
Feature Summary
- Incorporates Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technologies for low switching losses and high robustness.
- Features extended operation temperature capability and high DC stability.
- Provides high short circuit capability with self-limiting short circuit current.
- Includes an integrated NTC thermistor for precise temperature monitoring.
Applications
- Commercial agriculture vehicles
- Hybrid utility vehicles
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm packaging and compliance details. Ensure that the component matches the required PrimePACK™2 mechanical dimensions and terminal configuration for your application design. Cross-reference the datasheet revision date to confirm the status of the provided electrical characteristics.
Selection Notes
Select this module for applications requiring high power density and robust short-circuit handling. Verify thermal management requirements based on the specified junction-to-case thermal resistance values. Confirm that the gate drive voltage limits align with the ±20 V maximum rating. Evaluate the stray inductance specifications to ensure compatibility with the intended switching frequency and voltage stress limits.
Part Context
This component belongs to the FF900R12 series of high-power IGBT modules. It utilizes the PrimePACK™2 form factor, which is designed for high current densities and efficient cooling. The module integrates both the IGBT switch and the anti-parallel diode in a single insulated package, simplifying assembly for inverter topologies.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides or contact technical support for verified alternatives.
