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Product Detailed Parameters
- Description：PP, IHM I, XHP 1,7KV
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FF900R12IE4VP is a half-bridge IGBT module from Infineon Technologies, utilizing Trenchstop IGBT4 technology and an Emitter Controlled Diode. It features a PrimePACK™2 housing with pre-applied thermal interface material. The collector-emitter voltage (VCES) is rated at 1200 V, with a continuous DC collector current (IC nom) of 900 A at TH = 60°C and Tvj max = 175°C. The repetitive peak collector current (ICRM) reaches 1800 A for 1 ms pulses. Typical saturation voltages are 1.75 V at 25°C and 2.45 V at 150°C. Thermal resistance from junction to heatsink is 48.1 K/kW per IGBT and 87.2 K/kW per diode. Operating temperature ranges from -40°C to +150°C.
Feature Summary
- High short-circuit capability and surge current robustness
- Integrated NTC temperature sensor for thermal monitoring
- Pre-applied thermal interface material within the housing
- High insulation strength with 4 kV AC isolation
Applications
- Hybrid commercial vehicles
- Traction drives
- Industrial inverters
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required technical specifications. Ensure compliance with RoHS directives and check for UL approval status relevant to your region. Validate the production date code against storage guidelines for modules containing pre-applied thermal interface material.
Selection Notes
Select this module for applications requiring high current density and robust short-circuit withstand capability. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate the thermal resistance values against your heatsinking design to ensure junction temperatures remain within the 150°C limit under switching conditions.
Part Context
This component belongs to the Trenchstop IGBT4 - E4 series, designed for industrial power conversion. It utilizes silicon technology in a PrimePACK™2 package. The module integrates both the IGBT switch and the anti-parallel diode into a single unit, optimizing space and reducing stray inductance compared to discrete solutions.
Replacement Considerations
Publicly confirmed substitute part numbers for FF900R12IE4VP are not available in the provided documentation. Verify compatibility with existing designs before considering alternative models from other manufacturers or different product families.
FAQ
What is the maximum baseplate operating temperature?
The maximum baseplate operating temperature (TBPmax) is 125°C.
Does the module include an integrated temperature sensor?
Yes, the module includes an integrated NTC temperature sensor with a nominal resistance of 5.00 kΩ at 25°C.
What is the typical gate threshold voltage?
The typical gate threshold voltage (VGEth) is 5.80 V at Tvj = 25°C, with a range of 5.20 V to 6.40 V.
