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The FF900R12IP4B60BOSA1 is a dual IGBT module from Infineon Technologies, part of the Trenchstop IGBT4 - P4 series. It utilizes silicon technology and features a PrimePACK 3 housing with screw mount installation. The module supports a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 900 A at 25°C. Key electrical parameters include a typical collector-emitter saturation voltage (VCE(sat)) of 2.05 V and a power dissipation (Pd) capacity of 7.65 kW. The device operates within a junction temperature range of -40°C to +150°C.
Verify the specific suffix B60 against official datasheets to confirm manufacturing lot details or regional compliance variations. Confirm package integrity upon receipt, as PrimePACK modules are sensitive to mechanical stress during handling. Ensure thermal interface material application matches manufacturer guidelines to maintain specified power dissipation ratings.
Select this component when a robust dual IGBT solution with 1.2 kV blocking capability is required. The PrimePACK 3 form factor offers higher current density compared to previous generations. Evaluate thermal management requirements carefully, given the 7.65 kW dissipation rating, to ensure adequate heat sinking for sustained operation at 900 A.
This module belongs to the Trenchstop IGBT4 family, representing an evolution in silicon gate technology. It succeeds earlier PrimePACK designs by offering improved short-circuit withstand capability and lower switching losses. The PrimePACK 3 package provides enhanced mechanical stability for demanding industrial environments.
FF900R12IP4D is a compatible alternative within the same current and voltage class using the PrimePACK 2 package. Verify pinout compatibility and thermal resistance differences when substituting.