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The FF900R12IP4BOSA2 is a single-channel IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features a PrimePACK™2 housing with an integrated NTC thermistor. The collector-emitter voltage (VCES) is rated at 1200 V, while the continuous DC collector current (IC nom) reaches 900 A at a case temperature of 100°C. The repetitive peak collector current (ICRM) is specified as 1800 A for a pulse duration of 1 ms. Total power dissipation (Ptot) is 5.1 kW at 25°C. The module supports an operating junction temperature range from -40°C to 150°C.
Verify the specific BOSA2 suffix against official Infineon documentation to confirm material content or RoHS compliance status. Confirm that the PrimePACK2 mechanical dimensions match the target mounting hardware. Ensure thermal interface material specifications align with the datasheet requirements for optimal heat transfer performance.
Select this component for high-current industrial applications requiring robust short-circuit tolerance. Verify that the gate drive circuitry can supply the required ±15 V swing. Check that the heatsink design accommodates the 5.1 kW total power dissipation limit. Ensure the system operates within the specified -40°C to 150°C junction temperature range.
This module belongs to the Infineon Trenchstop IGBT4 series, designed for high-efficiency power conversion. It integrates advanced trench gate technology with field-stop architecture to minimize switching losses. The PrimePACK2 package provides high power density and reliable thermal management for demanding industrial environments.
FF900R12IP4D
The maximum repetitive peak collector current (ICRM) is 1800 A for a pulse duration of 1 ms.
Yes, the module includes an integrated NTC thermistor with a nominal resistance of 5.00 kΩ at 25°C.
The isolation test voltage (VISOL) is 4.0 kV RMS for 1 minute at 50 Hz.