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The FF900R12IP4DBOSA2 is a Trenchstop IGBT4 half-bridge module from Infineon Technologies, housed in the PrimePACK 2 package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 900 A at 25°C. The typical saturated collector-emitter voltage is 1.7 V, with a power dissipation rating of 5.1 kW. Operating temperatures range from -40°C to +150°C junction temperature. Key electrical parameters include a gate-emitter leakage current of 400 nA and a maximum gate-emitter voltage of 20 V.
Verify the complete part number including the BOSA2 suffix against official Infineon documentation to ensure correct configuration. Confirm RoHS compliance status and specific manufacturing lot dates during acquisition. Cross-reference datasheet revisions to validate parameter consistency before integration into production designs.
Select this component for applications requiring high current density within the PrimePACK 2 form factor. Ensure the cooling system can handle the 5.1 kW power dissipation capability. Verify that the drive circuit supports the specified 20 V gate-emitter voltage limits and matches the required switching speed characteristics defined in the technical data sheet.
This module belongs to the FF900R12 series, representing high-current variants within Infineon's Trenchstop IGBT4 portfolio. The BOSA2 suffix indicates a specific ordering or packaging variant associated with the standard IP4D product line. It serves as a core switching element in medium to high-power industrial electronics.
The FF900R12IP4D is the base model for this component. Verify if the BOSA2 suffix denotes a specific packaging or qualification difference. Check compatibility with existing PCB layouts and thermal interfaces when substituting with other PrimePACK 2 modules.