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The FF900R17ME7CBPSA1 is a dual IGBT module from Infineon Technologies, utilizing the EconoDUAL3 housing and TRENCHSTOP IGBT7 technology. It features an emitter-controlled diode configuration with a maximum collector-emitter voltage (VCEO) of 1.7 kV. The module supports a continuous collector current of 900 A at 25°C and exhibits a typical collector-emitter saturation voltage of 1.85 V. Key electrical limits include a gate-emitter leakage current of 100 nA and a maximum gate-emitter voltage of 20 V. The component incorporates an NTC thermistor for thermal monitoring and utilizes press-fit mounting for secure installation.
Verify the complete part number including suffixes against official Infineon documentation to ensure correct technical specifications. Confirm that the procurement channel provides valid traceability and authenticity guarantees. Check for specific handling requirements related to electrostatic discharge sensitivity during storage and assembly processes.
Select this module for applications requiring high current capacity within a compact form factor. Ensure the cooling system design accommodates the thermal characteristics of the EconoDUAL3 package. Verify that the control circuitry can handle the specified gate voltage limits and drive currents required for the IGBT7 technology.
This component belongs to the EconoDUAL3 series, which is designed for industrial power electronics. It represents a generation of modules combining high power density with robust mechanical mounting solutions. The TRENCHSTOP IGBT7 technology indicates advanced semiconductor processing aimed at improving efficiency in medium to high-power conversion applications.
Direct replacements must match the 1.7 kV voltage class, 900 A current rating, and EconoDUAL3 footprint. Verify compatibility of the press-fit pin layout and thermal interface dimensions. Consider modules with similar TRENCHSTOP or equivalent advanced IGBT technologies for comparable performance characteristics.