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The FF900R17ME7WB11BPSA1 is a dual IGBT module from Infineon Technologies, utilizing TRENCHSTOP™ IGBT7 technology and an emitter-controlled diode. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (ICDC) of 800 A at a junction temperature of 175 °C. The maximum repetitive peak collector current (ICRM) reaches 1800 A. The module incorporates PressFIT contact technology for mounting and includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25 °C. It operates within a junction temperature range of -40 °C to 175 °C.
Verify the specific ordering suffix against official documentation to confirm the exact configuration, as variations exist within the product family. Ensure compatibility with recommended gate drivers listed in the manufacturer's GDFinder tool. Confirm that the application environment meets the industrial qualification standards defined in IEC 60747, 60749, and 60068.
Select this component for applications requiring high current density and efficient thermal management via direct cooling. Consider the 1700 V rating and 800 A continuous current capability when designing for medium-voltage systems. Verify that the system layout accommodates the PressFIT mounting requirements and that the gate drive circuitry supports the specified internal gate resistance and charge characteristics.
This module belongs to the EconoDUAL™3 series, designed for industrial applications. It combines TRENCHSTOP™ IGBT7 chips with an emitter-controlled diode to optimize switching performance. The standard housing facilitates integration into various power electronic platforms, supporting both screw and press-fit installation methods depending on the specific variant requirements.
Publicly confirmed substitute part numbers are not available in the provided datasheet or source material. Consult Infineon technical support for cross-reference information regarding alternative modules with similar electrical ratings and package dimensions.