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The FMB2227A is a dual complementary bipolar junction transistor (BJT) array manufactured by onsemi, featuring one NPN and one PNP transistor in a SuperSOT-6 surface-mount package. It supports a maximum collector current of 500mA and a collector-emitter breakdown voltage of 30V. The device has a transition frequency of 250MHz and a maximum power dissipation of 700mW. DC current gain is specified at a minimum of 30 at 300mA and 10V, with a saturation voltage of 1.4V max at 300mA. Operating temperature ranges from -55°C to 150°C TJ.
Verify the exact part number against official datasheets, as the input model FFB2227A appears to be a typo for the verified onsemi part FMB2227A. Confirm package type and electrical ratings match design requirements before ordering. Check manufacturer documentation for lead times and availability status.
Select this component when a matched NPN/PNP pair is required in a small surface-mount form factor. Ensure the 30V voltage rating and 500mA current limit suit the application load. Verify thermal management capabilities given the 700mW power dissipation limit in the SuperSOT-6 package.
The FMB2227A belongs to onsemi's lineup of dual BJT arrays designed for space-constrained designs. It serves as a compact alternative to discrete transistor pairs, simplifying PCB layout while maintaining complementary switching performance for general electronic applications.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult onsemi technical support or authorized distributors for qualified alternatives if the FMB2227A is unavailable.