FFSM0865B

Single Diodes Overview

The FFSM0865B is a Silicon Carbide (SiC) Schottky diode manufactured by onsemi, belonging to the EliteSiC product series. It features a single configuration housed in a 4PQFN package, designed for surface-mount installation. The device supports a maximum repetitive reverse voltage of 650 V and conducts an average forward current of 11.6 A. Key electrical specifications include a forward voltage of 1.7 V at rated conditions and a maximum reverse leakage current of 500 nA. It withstands a forward surge current of 56 A and operates within a junction temperature range from -55 °C to +175 °C.

Single Diodes Feature Summary

• Utilizes silicon carbide technology to eliminate reverse recovery charge, enabling high-speed switching with minimal energy loss.
• Features a temperature-independent switching characteristic that maintains performance stability across extreme thermal environments.
• Incorporates a low-profile 4PQFN package design to facilitate compact circuit board layouts and efficient thermal dissipation.

Single Diodes Applications

• DC fast charging infrastructure for electric vehicles
• High-efficiency power supply units
• Solar micro-inverters

Single Diodes Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm exact packaging options, such as reel or cut tape quantities. Ensure the selected variant matches the required RoHS compliance status and lead time expectations. Cross-reference the manufacturer's part number with distributor listings to confirm availability and authenticity before finalizing procurement orders.

Single Diodes Selection Notes

Select this component for applications requiring high-temperature operation up to 175 °C and superior efficiency compared to traditional silicon rectifiers. The 650 V rating suits medium-voltage systems, while the 11.6 A current capacity supports moderate power levels. Consider the 4PQFN package constraints regarding PCB space and thermal management requirements during the design phase.

Single Diodes Part Context

This device is part of onsemi’s EliteSiC portfolio, engineered to replace conventional silicon diodes in high-frequency power conversion circuits. The FFSM0865B specifically targets the 650 V class market, offering reduced electromagnetic interference and higher system reliability. Its integration into modern power electronics enables smaller form factors and improved overall energy conversion efficiency.

Single Diodes Replacement Considerations

Direct replacements must match the 650 V rating, 11.6 A current capacity, and 4PQFN footprint. Verify thermal resistance characteristics and pinout compatibility to ensure seamless integration without redesigning the printed circuit board layout.

Single Diodes FAQ

What is the maximum operating junction temperature for the FFSM0865B?

The maximum operating junction temperature is +175 °C.

Does the FFSM0865B exhibit reverse recovery charge?

No, as a silicon carbide Schottky diode, it has no reverse recovery charge, resulting in zero reverse recovery current.