FG6943010R

Description：MOSFET N/P-CH 30V 0.1A SSMINI6
Series：-

SKU:583feb797d25 Category: FET, MOSFET Arrays Brand: Panasonic Electronic Components

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Product introduction

FG6943010R is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is MOSFET N/P-CH 30V 0.1A SSMINI6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FG6943010R

Description：MOSFET N/P-CH 30V 0.1A SSMINI6
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：100mA
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-40°C ~ 85°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SSMini6-F3-B
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FG6943010R

FG6943010R

FET, MOSFET Arrays Overview

The FG6943010R is a dual-channel enhancement-mode MOSFET in an SSMini6-F3-B surface-mount package. It integrates one N-channel (FET1) and one P-channel (FET2) silicon transistor. The device supports a drain-source voltage of ±30 V and a continuous drain current of ±100 mA. Key electrical parameters include a maximum total power dissipation of 125 mW, a gate-source voltage rating of ±12 V, and a channel temperature limit of 150 °C. The component operates within an ambient temperature range of -40 °C to +85 °C.

FET, MOSFET Arrays Feature Summary

Supports low-voltage drive signals at 2.5 V
Compliant with halogen-free and RoHS environmental standards

FET, MOSFET Arrays Applications

General-purpose switching for office equipment
Switching applications in communication equipment
Control circuits for measuring instruments
Power management in household appliances

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin on the physical component marking. Following September 1, 2020, semiconductor production was transferred to Nuvoton Technology Corporation Japan (NTCJ). Confirm that the part number matches the official datasheet specifications and ensure compliance with the specific packaging requirements for embossed tape and reel delivery.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-switch solution is required for low-current applications. Ensure the design accommodates the 125 mW power dissipation limit and the ±12 V maximum gate-source voltage. Verify that the operating environment remains within the specified -40 °C to +85 °C ambient temperature range for reliable performance.

FET, MOSFET Arrays Part Context

This component belongs to the Panasonic FG series of small-signal MOSFETs. The manufacturing rights were transferred from Panasonic Semiconductor Solutions Co., Ltd. to Nuvoton Technology Corporation Japan (NTCJ) in 2020. Products manufactured after this date are produced by NTCJ but continue to be distributed under the Panasonic brand name.