FGA15N120ANDTU

Description：IGBT NPT 1200V 24A TO-3PN
Series：-

SKU:6824993226fa Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 24A TO-3PN
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：24 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 15A
Power - Max：200 W
Switching Energy：3.27mJ (on), 600µJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：90ns/310ns
Test Condition：600V, 15A, 20Ohm, 15V
Reverse Recovery Time (trr)：330 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3PN
Grade：-
Qualification：-

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FGA15N120ANDTU

Overview

The FGA15N120ANDTU is a single IGBT with an integrated fast recovery diode, manufactured by onsemi using NPT technology. It operates in the TO-3PN package. The device features a collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25°C case temperature. The saturation voltage is 2.4 V at 15 A. The integrated diode exhibits a reverse recovery time of 210 ns typical. Maximum power dissipation is rated at 200 W at 25°C.

Feature Summary

Employs NPT technology to achieve low conduction and switching losses.
Integrates a high-speed FRD with a short reverse recovery time for efficient operation.
Provides high input impedance suitable for standard gate drive circuits.

Applications

Induction heating systems
Uninterruptible power supplies (UPS)
AC and DC motor controls
General purpose inverters

Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entity onsemi. Confirm the specific suffix 'ANDTU' matches the required TO-3PN package and RoHS compliance status. Ensure the datasheet revision aligns with the design requirements before procurement.

Selection Notes

Select this component for applications requiring robust 1200V blocking capability and moderate current handling up to 15A. Consider the thermal resistance values when designing heat sinks. Verify that the gate drive voltage of 15V is compatible with the control circuitry for optimal switching performance.

Part Context

This part belongs to the AND series of IGBTs from Fairchild Semiconductor, now under onsemi. The series utilizes Non-Punch-Through (NPT) technology to balance switching speed and conduction loss. It serves as a discrete solution for medium-power switching applications where integrated freewheeling diodes are necessary.

Replacement Considerations

Check for direct replacements within the same ON Semiconductor/Fairchild portfolio offering identical pinouts and electrical characteristics. Verify that any substitute maintains the TO-3PN mechanical dimensions and thermal performance specifications.