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Product Detailed Parameters
- Description：IGBT NPT/TRENCH 1200V 30A TO-3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT and Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
- Power - Max：186 W
- Switching Energy：3mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：15ns/160ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：330 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The FGA15N120ANTDTU-F109 is a field-stop trench-gate IGBT manufactured by onsemi. It features a 1200V collector-emitter voltage rating and a continuous collector current of 30A at 25°C, with a maximum power dissipation of 275W. The device utilizes advanced trench gate technology to achieve low saturation voltage and optimized switching characteristics. It is housed in a TO-247 package designed for high thermal performance and robust mechanical stability in industrial power applications.
Feature Summary
- Field-stop trench-gate technology for enhanced efficiency
- High short-circuit withstand capability
- Low saturation voltage for reduced conduction losses
- Optimized switching speed for improved system performance
Applications
- Industrial motor drives
- Switched-mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the exact part number against official manufacturer documentation to ensure compatibility with design specifications. Confirm that the suffix matches the required variant, as ordering codes may differ from standard listings. Cross-reference datasheet parameters such as Vce(sat) and switching times with actual application requirements before procurement.
Selection Notes
Select this component based on its 1200V blocking voltage and 30A current capacity suitable for medium-power applications. Evaluate thermal management requirements given the 275W power dissipation rating. Ensure the TO-247 package fits the PCB layout and heatsinking constraints. Compare switching losses and saturation voltage against alternative devices for optimal efficiency in the specific circuit topology.
Part Context
This IGBT belongs to onsemi's portfolio of discrete power semiconductors designed for high-voltage switching applications. It complements other components in power conversion systems where reliable operation under high stress is critical. The device represents a balance between cost-effectiveness and performance for general-purpose industrial electronics.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence, including Vces, Ic, and package dimensions, before replacing the original component in existing designs.
