FGA15N120FTDTU

FGA15N120FTDTU

  • Description:IGBT TRENCH FS 1200V 30A TO-3P
  • Series:-

SKU:3bc5a230136c Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH FS 1200V 30A TO-3P
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):45 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 15A
  • Power - Max:220 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:100 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):575 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

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FGA15N120FTDTU

Overview

The FGA15N120FTDTU is a 1200 V, 15 A Field Stop Trench IGBT manufactured by onsemi (formerly Fairchild Semiconductor). It utilizes advanced field stop trench technology to deliver superior conduction and switching performance for soft switching applications. The device features a low saturation voltage of 1.58 V at IC = 15 A and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-3PN format, it supports parallel operation and exhibits high avalanche ruggedness.

Feature Summary

  • Field Stop Trench Technology
  • High Speed Switching
  • Low Saturation Voltage
  • High Input Impedance

Applications

  • Induction Heating
  • Microwave Oven

Procurement Notes

Verify the authenticity of the component through authorized distributors or direct manufacturer channels. Ensure the ordering suffix matches the required packaging configuration. Confirm that the device meets RoHS compliance standards as specified in the official datasheet documentation before finalizing procurement.

Selection Notes

Select this component for applications requiring efficient soft switching and robust avalanche performance. Consider the thermal resistance characteristics and maximum power dissipation limits when designing the heat sinking solution. Verify gate drive requirements against the specified threshold voltage and total gate charge parameters.

Part Context

This part belongs to the FGA15N120 series of 1200 V trench IGBTs from onsemi. It represents an evolution in field stop technology designed specifically for high-efficiency power conversion. The series is widely recognized for its balance between low conduction losses and fast switching capabilities in residential and industrial heating appliances.

Replacement Considerations

FGA15N120FTD

FGA15N120FTDTUFGA15N120FTDTU

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