FGA15S125P

Description：IGBT TRENCH 1250V 30A TO-3P
Series：-

SKU:051a8f58134c Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1250V 30A TO-3P
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1250 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.72V @ 15V, 15A
Power - Max：136 W
Switching Energy：-
Input Type：Standard
Gate Charge：129 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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FGA15S125P

Overview

The FGA15S170P is a 1250 V, 30 A shorted-anode IGBT from onsemi’s EliteSiC family. It utilizes advanced field-stop trench and shorted-anode technology to deliver superior conduction and switching performance. The device features a TO-3PN package and supports parallel operation with robust avalanche capability. Designed for high-efficiency industrial applications, it offers reliable power switching in demanding environments.

Feature Summary

Advanced field-stop trench and shorted-anode technology for optimized performance
Robust avalanche rating suitable for harsh operating conditions
Capable of parallel configuration for higher current applications

Applications

Industrial motor drives
High-power switching applications
Energy infrastructure systems

Procurement Notes

Verify the exact part number suffix against official datasheets to confirm specific thermal or electrical variants. Ensure compatibility with existing gate drive requirements and thermal management solutions. Cross-reference manufacturer documentation for latest revision status and recommended operating conditions before integration.

Selection Notes

Select this component for applications requiring high voltage blocking and efficient switching at moderate currents. Consider its avalanche ruggedness for systems prone to transient overvoltages. Evaluate thermal resistance parameters for heatsink design. Confirm package compatibility with PCB layout constraints and mounting hardware specifications.

Part Context

This IGBT belongs to onsemi’s portfolio of intelligent power solutions. It complements other discrete power devices like MOSFETs and SiC diodes within the company’s broader energy conversion offerings. The device supports system-level efficiency improvements in industrial and renewable energy sectors through advanced semiconductor architecture.

Replacement Considerations

Consult official substitution guides for direct equivalents. Verify pinout compatibility and electrical parameter margins when considering alternative manufacturers. Ensure thermal characteristics match existing cooling designs to maintain reliability standards.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.