FGA180N33ATTU

Overview

The FGA180N33ATTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 330 V and a continuous collector current rating of 180 A. The device utilizes Trench field-stop technology to achieve low conduction losses. It is housed in a TO-3P flange mount package with three pins, designed for high-power industrial applications. The component is RoHS compliant and lead-free.

Feature Summary

• Trench field-stop technology for optimized switching performance
• Low conduction loss characteristics
• High reliability copper-clip bonded construction

Applications

• Induction heating systems
• Uninterruptible power supplies (UPS)
• Motor control drives

Procurement Notes

Verify the manufacturer origin, as Rochester Electronics also lists this part number alongside onsemi. Confirm the specific datasheet version matches the required electrical parameters. Ensure the TO-3P package dimensions align with the thermal management design. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Selection Notes

Select this component for applications requiring high current handling at moderate voltages. The TO-3P package facilitates direct mounting to heatsinks for efficient thermal dissipation. Consider the gate charge requirements when designing the driver circuitry to ensure adequate switching speed without excessive drive power.

Part Context

This IGBT belongs to the high-power discrete semiconductor category within onsemi's portfolio. It is engineered for robust operation in demanding environments where efficiency and thermal stability are critical. The product line supports various industrial power conversion topologies.

Replacement Considerations

Direct substitutes include other 330V, 180A N-channel IGBTs in TO-3P packages from manufacturers such as Fuji Electric or Mitsubishi Electric. Verify pinout compatibility and thermal resistance values before substitution.