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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 40A TO-3P
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 20A
- Power - Max：348 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：208 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
Download product information
Overview
The Fairchild Semiconductor FGA20S120M is a single N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 40 A at 25 °C. The device is housed in a TO-3PN three-pin through-hole package, measuring 15.8 x 5 x 20.1 mm. It supports a maximum power dissipation of 348 W and operates within a temperature range of -55 °C to +175 °C junction temperature. The gate-emitter voltage is rated at ±25 V.
Feature Summary
- High-voltage capability with 1200 V collector-emitter breakdown
- Robust current handling with 40 A continuous collector current
- Thermal resilience supporting operation up to +175 °C junction temperature
- Standardized TO-3PN through-hole mounting for reliable integration
Applications
- Industrial motor drives and control systems
- Switching mode power supplies (SMPS)
- Inverter circuits for renewable energy systems
Procurement Notes
Verify the manufacturer origin carefully, as Fairchild Semiconductor's discrete semiconductor division was acquired by onsemi. Ensure the specific part number matches the required datasheet revision and that the component meets all necessary regulatory standards for your target market before finalizing procurement decisions.
Selection Notes
Select this component when a 1200 V IGBT with 40 A capacity is required in a TO-3PN package. Confirm that the thermal management solution can handle the 348 W power dissipation rating. Verify compatibility with standard gate drive voltages of ±15 V to ±25 V for optimal switching performance.
Part Context
This component belongs to the FGA20S series of IGBTs from Fairchild Semiconductor. The series typically includes variants with different voltage ratings, such as the FGA20S140P which offers 1400 V blocking capability. These devices are engineered for medium to high-power industrial applications requiring efficient switching and robust performance under high stress conditions.
Replacement Considerations
The onsemi FGA20S140P is a related variant offering higher voltage tolerance (1400 V vs 1200 V) but similar current ratings. Verify pinout compatibility and thermal characteristics before substitution. Other 1200 V, 40 A IGBTs in TO-3PN packages may serve as alternatives if electrical parameters align.
