FGA20S125P

$1.67

Description：IGBT TRENCH FS 1250V 40A TO-3PN
Series：-

SKU:02d2b31fff1f Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1250V 40A TO-3PN
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1250 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：250 W
Switching Energy：-
Input Type：Standard
Gate Charge：129 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3PN
Grade：-
Qualification：-

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FGA20S125P

Overview

The FGA20S125P is a single IGBT manufactured by onsemi, housed in a TO-3PN through-hole package. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 40 A at 25 °C. The device exhibits a typical collector-emitter saturation voltage of 2.2 V and supports a power dissipation (Pd) of 272 W. Operating temperatures range from -55 °C to +175 °C, with gate-emitter voltage limits of ±25 V.

Feature Summary

High-voltage capability suitable for demanding industrial applications
Robust thermal performance with high power dissipation rating
Through-hole mounting for secure mechanical attachment

Applications

Industrial motor drives
Switch-mode power supplies
Inverter circuits

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm RoHS compliance status via official manufacturer documentation before integration. Ensure storage conditions maintain integrity given the component's age and discontinuation status.

Selection Notes

Select this component for designs requiring 1200 V blocking voltage and 40 A continuous current handling. Evaluate thermal management requirements against the 272 W dissipation limit. Consider the TO-3PN package dimensions for PCB layout compatibility.

Part Context

This IGBT belongs to onsemi’s discrete power transistor portfolio, designed for medium-to-high power switching applications. It complements other high-voltage devices in the series, offering reliable performance in environments requiring robust electrical isolation and thermal stability.

Replacement Considerations

Consult official cross-reference tools for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence with substitute parts before implementation.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.