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Product Detailed Parameters
- Description：IGBT NPT 1200V 40A TO-3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 25A
- Power - Max：310 W
- Switching Energy：4.8mJ (on), 1mJ (off)
- Input Type：Standard
- Gate Charge：200 nC
- Td (on/off) @ 25°C：60ns/170ns
- Test Condition：600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The FGA25N120ANTU is a single NPT trench-gate IGBT in a TO-3P package. It features a collector-emitter voltage (VCES) of 1200 V and a continuous collector current (IC) of 40 A at 25°C case temperature, derating to 25 A at 100°C. The saturation voltage (VCE(sat)) is typically 2.5 V at IC = 25 A and VGE = 15 V. Maximum power dissipation is 310 W at 25°C. Operating junction temperature ranges from -55°C to +150°C.
Feature Summary
- Employs Non-Punch-Through (NPT) technology for optimized conduction and switching performance.
- Features high-speed switching characteristics with low saturation voltage.
- Provides high input impedance suitable for standard gate drive circuits.
Applications
- Induction heating systems
- Uninterruptible power supplies (UPS)
- AC and DC motor controls
- General purpose inverters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact pinout, thermal resistance values, and packaging configuration. Ensure the component meets the required voltage and current ratings for the target application before procurement.
Selection Notes
Select this device for applications requiring robust non-punch-through technology and high voltage blocking capability. Consider the thermal resistance and power dissipation limits when designing heat sinks for continuous operation at elevated case temperatures.
Part Context
This component belongs to the AN series of IGBTs manufactured by Fairchild Semiconductor, now part of onsemi. The series is designed for general-purpose power switching applications, offering a balance between low conduction losses and fast switching speeds.
Replacement Considerations
Direct replacements include the FGA25N120AN or FGA25N120ANTDTU. Verify that substitute parts match the TO-3P package dimensions and electrical specifications such as VCES and IC ratings.
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (BVCES) is 1200 V.
How does the continuous collector current change with case temperature?
The continuous collector current is 40 A at a case temperature of 25°C and decreases to 25 A at a case temperature of 100°C.
What is the typical total switching loss under standard test conditions?
The typical total switching loss (Ets) is 5.7 mJ at VCC = 600 V, IC = 25 A, RG = 10 Ω, and TC = 25°C.
