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The FGA25S125P is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, designed for high-performance power conversion applications. It features a single configuration housed in a TO-3PN through-hole package. The device supports a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 25 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.4 V, a gate-emitter voltage range of -25 V to +25 V, and a power dissipation capacity of 272 W. It operates within a temperature range of -55°C to +175°C.
Verify the specific datasheet revision and compliance documentation directly from onsemi before procurement. Confirm that the TO-3PN package dimensions match the target PCB or chassis layout requirements. Ensure thermal interface materials are compatible with the specified power dissipation levels to maintain safe operating temperatures during operation.
Select this component when a 1200 V rating and 25 A continuous current are required in a through-hole format. Compare the 2.4 V saturation voltage against alternative devices to evaluate conduction losses. Verify that the switching characteristics align with the system's frequency requirements and that the drive circuitry can support the specified gate voltage limits.
This IGBT belongs to onsemi's discrete power transistor portfolio, specifically targeting medium-power industrial applications. It complements other devices in the S-series lineup, offering a balance between voltage handling and current capacity. The TO-3PN package provides a standardized form factor for legacy and new designs requiring robust thermal management solutions.
Consult official cross-reference guides for verified substitutes. Ensure any replacement maintains the 1200 V rating, 25 A current capacity, and TO-3PN package compatibility. Verify that electrical parameters such as saturation voltage and switching times do not degrade system performance.