FGA30N65SMD

FGA30N65SMD

$1.79
  • Description:IGBT FIELD STOP 650V 60A TO-3PN
  • Series:-

SKU:04f8ca05b26c Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT FIELD STOP 650V 60A TO-3PN
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • IGBT Type:Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 30A
  • Power - Max:300 W
  • Switching Energy:716µJ (on), 208µJ (off)
  • Input Type:Standard
  • Gate Charge:87 nC
  • Td (on/off) @ 25°C:14ns/102ns
  • Test Condition:400V, 30A, 6Ohm, 15V
  • Reverse Recovery Time (trr):35 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3PN
  • Grade:-
  • Qualification:-

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FGA30N65SMD

Overview

The FGA30N65SMD is a 650 V, 60 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-3PN package designed for through-hole mounting. The device supports a maximum continuous collector current of 60 A and handles up to 300 W of power dissipation. It operates within a temperature range of -55 °C to +175 °C, with a maximum gate-emitter voltage of ±20 V. The component measures 16.2 x 5 x 20.1 mm and utilizes a single transistor configuration.

Feature Summary

  • High-voltage capability rated at 650 V for robust operation in demanding environments
  • High-current handling capacity of 60 A suitable for heavy-duty switching applications
  • Extended thermal stability allowing operation up to +175 °C junction temperature
  • Through-hole TO-3PN packaging providing secure mechanical mounting and heat dissipation

Applications

  • Industrial motor drives and control systems
  • High-power switching circuits requiring robust isolation
  • Inverter topologies in renewable energy systems

Procurement Notes

Verify the manufacturer designation carefully, as the model number FGA30N65SMD is officially associated with onsemi rather than Fairchild Semiconductor. Confirm the specific suffix 'SMD' against official datasheets to ensure correct pinout and electrical characteristics match your design requirements before procurement.

Selection Notes

Select this component when a high-current IGBT with through-hole mounting is required. Ensure the application voltage does not exceed 650 V and that the thermal management system can handle 300 W dissipation. Verify compatibility with standard IGBT driver circuits capable of providing ±20 V gate drive signals.

Part Context

This component belongs to the family of high-power N-channel IGBTs designed for industrial applications. While the model identifier suggests a specific variant, it is critical to reference the official onsemi documentation for the FGA30N65 series to confirm exact specifications, as cross-manufacturer naming conventions may vary or indicate different internal technologies.

Replacement Considerations

Direct substitutes should be sought from the onsemi FGA30N65 series. Verify pin compatibility and electrical ratings such as Vces and Ic when considering alternatives from other manufacturers like STMicroelectronics or Infineon.

FGA30N65SMDFGA30N65SMD
$1.79
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