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The FGA30N65SMD is a 650 V, 60 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-3PN package designed for through-hole mounting. The device supports a maximum continuous collector current of 60 A and handles up to 300 W of power dissipation. It operates within a temperature range of -55 °C to +175 °C, with a maximum gate-emitter voltage of ±20 V. The component measures 16.2 x 5 x 20.1 mm and utilizes a single transistor configuration.
Verify the manufacturer designation carefully, as the model number FGA30N65SMD is officially associated with onsemi rather than Fairchild Semiconductor. Confirm the specific suffix 'SMD' against official datasheets to ensure correct pinout and electrical characteristics match your design requirements before procurement.
Select this component when a high-current IGBT with through-hole mounting is required. Ensure the application voltage does not exceed 650 V and that the thermal management system can handle 300 W dissipation. Verify compatibility with standard IGBT driver circuits capable of providing ±20 V gate drive signals.
This component belongs to the family of high-power N-channel IGBTs designed for industrial applications. While the model identifier suggests a specific variant, it is critical to reference the official onsemi documentation for the FGA30N65 series to confirm exact specifications, as cross-manufacturer naming conventions may vary or indicate different internal technologies.
Direct substitutes should be sought from the onsemi FGA30N65 series. Verify pin compatibility and electrical ratings such as Vces and Ic when considering alternatives from other manufacturers like STMicroelectronics or Infineon.