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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-3PN
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：238 W
- Switching Energy：598µJ (on), 167µJ (off)
- Input Type：Standard
- Gate Charge：54.7 nC
- Td (on/off) @ 25°C：14.4ns/52.8ns
- Test Condition：400V, 30A, 6Ohm, 15V
- Reverse Recovery Time (trr)：31.8 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The onsemi FGA30T65SHD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing Trench Field Stop technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current rating of 60 A at 25°C. The device supports a pulse collector current of 90 A and dissipates up to 238 W of power. Key electrical parameters include a gate charge of 54.7 nC, turn-on time of 14.4 ns, turn-off time of 52.8 ns, and reverse recovery time of 31.8 ns. It operates within a junction temperature range of -55°C to 175°C.
Feature Summary
- Employs Trench Field Stop architecture for optimized switching performance and low conduction losses.
- Designed for high-voltage applications with robust 650V blocking capability.
- Provides high current handling with 60A continuous and 90A pulsed ratings.
- Engineered for efficient thermal management in through-hole mounting configurations.
Applications
- Industrial motor drives and control systems
- Uninterruptible Power Supplies (UPS)
- High-frequency welding equipment
- Inverter circuits for power conversion
Procurement Notes
This component is officially End-of-Life (EOL) as per Product Change Notification dated June 30, 2022. Procurement should focus on verified replacement part numbers from the same manufacturer family rather than sourcing obsolete inventory. Verify compatibility with existing circuit designs before transitioning to substitute components.
Selection Notes
Select this IGBT for applications requiring high voltage isolation and moderate current capacity. The TO-3PN package facilitates reliable thermal dissipation for power densities up to 238 W. Consider the specific switching times and gate charge requirements when designing drive circuits to ensure optimal efficiency and minimize switching losses in high-frequency operations.
Part Context
The FGA30T65SHD belongs to onsemi's FS3 IGBT family, which utilizes advanced Field Stop Trench technology. This series is engineered to deliver superior performance characteristics compared to standard planar IGBTs, offering reduced switching energy and improved thermal stability for demanding power electronics applications.
Replacement Considerations
Official substitutes include other models within the onsemi FGA30T65FSH or similar FS3 series families that maintain compatible pinout and electrical specifications. Verify datasheet alignment for voltage, current, and package dimensions before implementation.
FAQ
What is the maximum junction temperature for the FGA30T65SHD?
The maximum operating junction temperature (TJ) for this component is 175°C.
Does the FGA30T65SHD support hard-switching applications?
Yes, the device is designed with fast switching times (turn-on: 14.4ns, turn-off: 52.8ns) suitable for hard-switching applications such as inverters and motor drives.
