FGA4060ADF

Overview

The FGA4060ADF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing FS Gen3 Trench technology. It features a TO-3PN through-hole package with a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 80 A at 25°C. The device exhibits a typical saturation voltage (VCEsat) of 1.8 V and supports a power dissipation (Pd) of 238 W. Operating within a temperature range of -55°C to +175°C, it includes a gate-emitter voltage limit of ±20 V and a leakage current of 400 nA.

Feature Summary

• FS Gen3 Trench IGBT technology for optimized switching performance
• Single configuration in a robust TO-3PN through-hole package
• High thermal stability supporting operation up to 175°C

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify component authenticity through authorized channels due to End-of-Life status. Confirm RoHS and REACH-SVHC compliance details directly with the manufacturer or certified distributors. Ensure storage conditions meet semiconductor handling standards to prevent degradation prior to assembly.

Selection Notes

Select this component for high-current applications requiring 600 V blocking capability. Evaluate thermal management requirements against the 238 W dissipation rating. Consider the TO-3PN package constraints for PCB layout and heatsinking compatibility during the design phase.

Part Context

This part belongs to onsemi’s FGA series of Field Stop trench-gate IGBTs. It represents a generation of devices designed for improved efficiency compared to earlier planar technologies. The specific suffix 'ADF' denotes the TO-3PN package variant within this product line.

Replacement Considerations

Check for direct pin-compatible substitutes within the same voltage and current ratings. Verify that alternative components maintain similar VCEsat characteristics and switching speeds to ensure circuit compatibility without redesign.