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The FGA40S65SH is a Field Stop Trench IGBT manufactured by onsemi, rated for 650 V collector-emitter voltage and 40 A continuous collector current. It utilizes trench gate technology to achieve low saturation voltage and fast switching characteristics. The device is housed in a TO-247AD package designed for through-hole mounting. Key electrical parameters include a maximum power dissipation of 349 W at 25°C and an operating temperature range from -55°C to +175°C. The component features a single configuration with a maximum gate-emitter voltage of ±20 V.
Verify the exact suffix against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing PCB footprints and heatsinking requirements. Confirm RoHS compliance status via manufacturer documentation before integration into regulated products.
Select this component for applications requiring high voltage blocking and moderate current handling. Compare saturation voltage and switching times against alternative trench IGBTs for efficiency optimization. Verify thermal resistance values match the intended cooling strategy.
This part belongs to onsemi's Field Stop Trench IGBT family, designed for general-purpose power switching. It complements other devices in the series offering similar voltage ratings but varying current capacities or packaging options for diverse design needs.
Cross-reference with FGH40T65SH or FGAF40N60SMD for potential equivalents. Verify pinout compatibility and electrical parameter overlaps before substitution.