FGA50T65SHD

Overview

The FGA50T65SHD is a Field Stop 4th Generation N-channel IGBT manufactured by onsemi. It features a TO-247 package with through-hole mounting. The device supports a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage (VceSAT) of 1.8 V, a gate-emitter voltage range of ±20 V, and a power dissipation (Pd) of 333 W. The component operates within a temperature range of -55°C to +175°C.

Feature Summary

• Field Stop 4th Generation technology for optimized switching performance
• N-channel configuration in a robust TO-247 package
• High thermal stability supporting operation up to 175°C

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Ensure the supplier provides traceable documentation matching the manufacturer's specifications. Confirm RoHS compliance status directly from the vendor before finalizing orders.

Selection Notes

Select this component when a 650 V rating and 50 A continuous current are required. Compare VceSAT values against alternatives to evaluate conduction losses. Verify that the TO-247 package fits the thermal management design constraints of the target application.

Part Context

This part belongs to onsemi's Field Stop 4th Generation IGBT family. It shares architectural similarities with other high-voltage devices in the series but differs in current handling capabilities. The FGA50T65SHD serves as a specific variant within the broader portfolio of discrete power transistors designed for industrial efficiency.

Replacement Considerations

FGH50N65SFD is a comparable alternative offering similar voltage ratings and packaging. Verify pin compatibility and thermal characteristics before substitution.