FGA6560WDF

$2.35

Description：IGBT TRENCH FS 650V 120A TO-3PN
Series：-

SKU:2a89e1a26b3c Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 120A TO-3PN
Series：-
Mfr：onsemi
Package：Bulk,Tube,Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：120 A
Current - Collector Pulsed (Icm)：180 A
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
Power - Max：306 W
Switching Energy：2.46mJ (on), 520µJ (off)
Input Type：Standard
Gate Charge：84 nC
Td (on/off) @ 25°C：25.6ns/71ns
Test Condition：400V, 60A, 6Ohm, 15V
Reverse Recovery Time (trr)：110 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3PN
Grade：-
Qualification：-

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FGA6560WDF

Overview

The FGA6560WDF is a single N-channel Field Stop Trench IGBT manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (Ic) of 120 A at 25°C. The device exhibits a collector-emitter saturation voltage (VCEsat) of 1.8 V and a maximum power dissipation (Pd) of 306 W. It operates within a temperature range of -55°C to +175°C, utilizes a TO-3PN through-hole package, and has a gate-emitter leakage current of 400 nA.

Feature Summary

Field Stop Trench technology for optimized switching performance
High thermal stability with a maximum junction temperature of 175°C
Robust packaging in a TO-3PN through-hole configuration

Applications

Industrial motor drives
Uninterruptible power supplies (UPS)
Inverter circuits

Procurement Notes

Verify the component status carefully as this part number is listed as End-of-Life (EOL) or discontinued in official distributor records. Confirm availability through authorized channels only, as stock may be limited or restricted. Ensure that any replacement strategy accounts for the obsolescence notification date provided by the manufacturer to avoid supply chain disruptions during production.

Selection Notes

Select this component when a high-current, 650 V IGBT is required for robust industrial applications. The TO-3PN package facilitates effective heat sinking for high-power dissipation scenarios. Consider the specific saturation voltage and current ratings against the system's thermal management capabilities to ensure reliable operation under continuous load conditions without exceeding the maximum junction temperature limits.

Part Context

This device belongs to the FS3TIGBT series from onsemi, designed for high-power switching applications. It represents a silicon-based solution utilizing Field Stop technology to enhance efficiency compared to standard trench designs. The product line targets demanding environments where reliability and high current handling are critical, serving as a key component in power conversion systems.