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Product Detailed Parameters
- Description：IGBT TRENCH 330V TO-3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：330 V
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：220 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 70A
- Power - Max：149 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：49 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：23 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The FGA70N33BTDTU is a trench IGBT with an integrated diode, rated at 330V collector-emitter voltage and 70A continuous collector current. It features a low saturation voltage of 1.7V at 70A and 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C and utilizes a TO-3P package. Key electrical parameters include a maximum gate-emitter voltage of ±30V, a pulsed collector current capability of up to 220A, and a total gate charge of 49nC at 200V and 20A.
Feature Summary
- Utilizes novel trench IGBT technology for optimized performance in applications requiring low conduction and switching losses.
- Provides high current capability combined with fast switching characteristics.
- Features a high input impedance standard gate drive interface.
Applications
- Plasma Display Panel (PDP) systems
Procurement Notes
Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm that the specific ordering suffix 'DTU' corresponds to the tube packaging format detailed in the official datasheet. Ensure the component meets RoHS compliance requirements before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a 330V rating with high current handling capabilities. Consider the thermal resistance values when designing heat sinks, noting the junction-to-case resistance is 0.84°C/W for the IGBT section. Evaluate the switching energy losses against the required operating frequency and gate resistance constraints.
Part Context
This part belongs to the FGA70N series of trench IGBTs developed by Fairchild Semiconductor. The 'BTD' designation identifies the specific 330V variant, while the 'TU' suffix indicates the tube packaging configuration. This series was engineered specifically to address the efficiency demands of PDP power supplies.
Replacement Considerations
Check for direct equivalents from onsemi or other manufacturers offering identical 330V/70A trench IGBT specifications in a TO-3P package. Verify pinout compatibility and ensure thermal and electrical parameters match or exceed the original requirements.
FAQ
What is the maximum pulsed collector current for this device?
The maximum pulsed collector current is 160A for repetitive pulses and 220A for half-sine wave pulses under specific duty cycle conditions.
Does the FGA70N33BTDTU include an integrated diode?
Yes, the datasheet provides electrical characteristics for an integrated anti-parallel diode, including forward voltage and reverse recovery time.
What is the typical saturation voltage at full load?
The typical collector-emitter saturation voltage is 1.7V when the collector current is 70A and the case temperature is 25°C.
