FGA90N33ATDTU

$1.28

Description：IGBT TRENCH 330V 90A TO3P
Series：-

SKU:10ceefa53c81 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 330V 90A TO3P
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：330 V
Current - Collector (Ic) (Max)：90 A
Current - Collector Pulsed (Icm)：330 A
Vce(on) (Max) @ Vge, Ic：1.4V @ 15V, 20A
Power - Max：223 W
Switching Energy：-
Input Type：Standard
Gate Charge：95 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：23 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3P
Grade：-
Qualification：-

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FGA90N33ATDTU

Overview

The FGA90N33ATDTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, utilizing PDP Trench technology. It features a collector-emitter voltage of 330V and a continuous collector current of 90A at 25°C case temperature. The device operates within a junction temperature range of -55°C to +150°C and is housed in a TO-3P package with through-hole mounting. Key electrical parameters include a saturation voltage of 1.1V at 20A and a maximum power dissipation of 223W at 25°C.

Feature Summary

High current capability for demanding power applications
Low saturation voltage for reduced conduction losses
Fast switching characteristics optimized for efficiency
RoHS compliant construction

Applications

Plasma Display Panel (PDP) systems
Power conversion circuits requiring low switching losses
Industrial motor drives

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to counterfeiting risks. Confirm the specific ordering suffix matches the required packaging configuration. Check current production status as availability may vary based on lifecycle management decisions.

Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with significant current handling. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values. Verify gate drive requirements align with the threshold voltage specifications for reliable turn-on and turn-off performance.

Part Context

This part belongs to the FGA90N33ATD series of trench IGBTs designed specifically for PDP applications. It represents an evolution in power semiconductor technology focusing on minimizing both conduction and switching energy losses compared to previous planar designs.