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Product Detailed Parameters
- Description：IGBT FIELD STOP 600V 80A TO-3PF
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 40A
- Power - Max：115 W
- Switching Energy：870µJ (on), 260µJ (off)
- Input Type：Standard
- Gate Charge：119 nC
- Td (on/off) @ 25°C：12ns/92ns
- Test Condition：400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr)：36 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3PF
- Grade：-
- Qualification：-
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Overview
The FGAF40N60SMD is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a TO-3PF package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 80 A at 25°C. Key electrical parameters include a saturation voltage of 1.9 V, a gate-emitter leakage current of 400 nA, and a power dissipation rating of 115 W. It operates within a temperature range from -55°C to +175°C.
Feature Summary
- Utilizes standard silicon technology for robust power switching performance.
- Features a low saturation voltage of 1.9 V to minimize conduction losses.
- Designed with a positive temperature coefficient to facilitate parallel operation.
Applications
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Power Factor Correction (PFC) circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm exact packaging and compliance details. Confirm that the component meets RoHS requirements for the intended market. Ensure thermal management solutions align with the 115 W power dissipation rating in the TO-3PF package. Validate lead compatibility for through-hole assembly processes.
Selection Notes
Select this component when a 600 V IGBT with high current capability is required. The TO-3PF package suits applications needing flange mounting for efficient heat sinking. Compare the 80 A continuous current rating against peak load demands. Consider the 1.9 V saturation voltage for efficiency optimization in low-loss designs.
Part Context
This part belongs to the Field Stop IGBT series from onsemi. The series utilizes advanced field stop technology to optimize performance for applications requiring low conduction and switching losses. It serves as a discrete power switch solution within broader semiconductor portfolios for industrial and renewable energy systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and thermal resistance characteristics if considering alternative manufacturers or different package variants within the same voltage and current class.
