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Product Detailed Parameters
- Description：IGBT
- Series：*
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The FGAF40N60UFTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It utilizes ultra-fast field-stop technology to achieve low conduction and switching losses. The device features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 40 A at 25°C. It operates within a junction temperature range of -55°C to +150°C. Key electrical parameters include a maximum saturation voltage of 3.1 V, a gate-emitter voltage limit of ±20 V, and a power dissipation rating of 100 W. The component is housed in a TO-3PF-3 package designed for through-hole mounting.
Feature Summary
- Ultra-fast switching performance optimized for high-frequency applications
- Low saturation voltage resulting in reduced conduction losses
- Field-stop trench technology for improved efficiency
Applications
- AC and DC motor control systems
- General purpose inverters
- Robotics and servo controls
Procurement Notes
Verify the manufacturer designation carefully, as the part was originally developed by Fairchild Semiconductor and is now produced by onsemi following their acquisition. Confirm that the specific suffix 'TU' corresponds to the tube packaging format required for your assembly process. Ensure the ordering information matches the exact electrical specifications documented in the official datasheet to avoid compatibility issues with existing circuit designs.
Selection Notes
Select this component when designing circuits requiring a balance between low conduction loss and fast switching speed. The 600V rating makes it suitable for medium-voltage power conversion applications. Consider the thermal management requirements associated with the TO-3PF package and the 100W power dissipation limit. Verify that the drive circuitry can support the gate charge characteristics specified for optimal switching performance.
Part Context
This IGBT belongs to the UF series of ultra-fast devices from the former Fairchild Semiconductor portfolio. The series is characterized by its use of field-stop technology to enhance switching capabilities compared to standard IGBTs. This specific model represents a transition point in manufacturing history, where parts originally branded under Fairchild are now distributed and produced under the onsemi brand name.
Replacement Considerations
The FGA40N60UFDTU is a documented substitute part number for this component. When replacing, verify that the pinout configuration and thermal characteristics of the alternative package are compatible with the existing PCB layout and heatsinking infrastructure.
