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The FGB20N60SFD-F085 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 20 A at 25°C, with a peak pulsed current capability of 40 A. The device utilizes Field Stop technology for optimized performance. It is housed in an SC-70-3 package designed for surface mount installation. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V and a power dissipation rating of 208 W. The component operates within a temperature range of -55°C to +150°C and holds AEC-Q101 qualification.
Verify the specific ordering suffix and manufacturer documentation to confirm exact specifications before integration. Confirm availability status as supply conditions may vary. Ensure compliance with RoHS and REACH requirements relevant to the target market. Cross-reference datasheet revisions to ensure compatibility with existing design parameters.
Select this component for applications requiring a compact surface-mount IGBT with automotive qualification. Compare the 20 A continuous current rating against load requirements. Evaluate the thermal management needs based on the 208 W power dissipation rating in the SC-70-3 package. Verify gate drive compatibility with the specified voltage limits.
This part belongs to the FGB20N60S series of single IGBTs from onsemi. It shares the same core semiconductor technology and voltage ratings as other variants in the family but differs in packaging and current handling capabilities. The F085 suffix indicates specific manufacturing or packaging details defined by the supplier.
Direct substitutes must match the 600V rating, 20A current capacity, and SC-70-3 package. Verify pinout compatibility and thermal characteristics. Check for equivalent AEC-Q101 qualification if used in automotive contexts.