FGB3040CS

$1.67

Description：IGBT 430V 21A D2PAK-6
Series：EcoSPARK®

SKU:53cfdc3ecd17 Category: Single IGBTs Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：IGBT 430V 21A D2PAK-6
Series：EcoSPARK®
Mfr：Fairchild Semiconductor
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：430 V
Current - Collector (Ic) (Max)：21 A
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：1.6V @ 4V, 6A
Power - Max：150 W
Switching Energy：-
Input Type：Logic
Gate Charge：15 nC
Td (on/off) @ 25°C：-/4.7µs
Test Condition：300V, 1kOhm, 5V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Supplier Device Package：D2PAK-6
Grade：-
Qualification：-

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FGB3040CS

Overview

The FGB3040CS is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the EcoSPARK series, manufactured by Fairchild Semiconductor. It is housed in a six-pin TO-263 (D2PAK) molded package. The device features a maximum collector-emitter voltage of 430 V and supports a continuous collector current of 21 A. Key electrical parameters include a maximum gate-emitter voltage of 12 V, a gate-emitter threshold voltage of up to 2.2 V, and a maximum fall time of 15000 ns. The component is lead-free and RoHS compliant.

Feature Summary

Integrates an isolated gate FET with a bipolar power transistor for efficient switching
Combines MOSFET gate drive simplicity with high current handling capability
Designed for low saturation voltage performance

Applications

General purpose power switching circuits
Motor control applications
High frequency inverter designs

Procurement Notes

Verify the manufacturer part number against official Fairchild Semiconductor documentation to confirm specifications. Ensure the package type matches the required TO-263 form factor. Check for RoHS compliance status if environmental regulations apply to the specific production batch. Confirm that the single configuration meets the circuit design requirements before procurement.

Selection Notes

Select this component when a 430 V rated IGBT with 21 A continuous current capacity is required. The TO-263 package is suitable for surface mount assembly where moderate thermal dissipation is needed. Consider the 15000 ns fall time for switching speed limitations in the target application. Verify that the gate drive voltage does not exceed the 12 V maximum rating.

Part Context

This device belongs to the Fairchild Semiconductor IGBT discrete transistor category. It utilizes the EcoSPARK technology platform, which focuses on optimizing switching characteristics. The component serves as a fundamental building block for power electronics requiring robust voltage blocking and controlled conduction.