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Product Detailed Parameters
- Description：IGBT 600V 45A TO-263
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：108 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：167 W
- Switching Energy：55µJ (on), 110µJ (off)
- Input Type：Standard
- Gate Charge：23 nC
- Td (on/off) @ 25°C：6ns/40ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The FGB30N6S2T is a 600V, SMPS II Series N-Channel IGBT manufactured by onsemi (formerly Fairchild Semiconductor). It features low gate charge and low plateau voltage characteristics designed to shorten delay times and reduce gate drive power requirements. The device supports high-voltage switched mode power supply applications requiring low conduction loss, fast switching speeds, and Unclamped Inductive Switching (UIS) capability. It is housed in a TO-263AB package with a tape and reel quantity of 800 units.
Feature Summary
- SMPS II technology combining fast switching speed with lower gate charge and plateau voltage
- Unclamped Inductive Switching (UIS) rated for avalanche capability
- Optimized for high voltage switched mode power supply applications
Applications
- Power Factor Correction (PFC) circuits
- Full bridge topologies
- Half bridge topologies
- Push-Pull circuits
- Uninterruptible power supplies
Procurement Notes
Verify the specific ordering suffix 'T' corresponds to the TO-263AB package configuration supplied in a 330mm tape and reel format containing 800 units per reel. Confirm that the component originates from the official Fairchild Semiconductor or onsemi documentation lineage to ensure authenticity and accurate electrical parameter alignment.
Selection Notes
Select this component for designs requiring 600V blocking capability with integrated UIS protection. Evaluate thermal management based on the 0.75 °C/W junction-to-case thermal resistance. Ensure gate drive circuitry accommodates the typical 6.5V plateau voltage and 23nC gate charge at 15V to optimize switching performance within the specified operating frequency limits.
Part Context
This part belongs to the SMPS II series of Low Gate Charge IGBTs developed by Fairchild Semiconductor. It shares core specifications with the FGH30N6S2 and FGP30N6S2 variants, differing primarily in the physical package style and shipping configuration. The FGB30N6S2 specifically utilizes the TO-263AB surface-mount package.
Replacement Considerations
Direct equivalents include the FGH30N6S2 and FGP30N6S2, which share identical electrical ratings but utilize different packages (TO-247 and TO-220AB respectively). Verify mechanical footprint compatibility when substituting these variants.
