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Product Detailed Parameters
- Description：IGBT FIELD STOP 600V 80A TO-263
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR)
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 40A
- Power - Max：349 W
- Switching Energy：870µJ (on), 260µJ (off)
- Input Type：Standard
- Gate Charge：119 nC
- Td (on/off) @ 25°C：12ns/92ns
- Test Condition：400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The FGB40N60SM is a Field Stop IGBT manufactured by onsemi, designed for high-efficiency power switching applications. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a continuous collector current (Ic) of 40 A at 25°C. The device utilizes second-generation Field Stop technology to achieve low saturation voltage and fast switching characteristics. Key electrical parameters include a typical VCE(sat) of 1.9 V at Ic = 40 A and an off-state energy loss (Eoff) of 6.5 µJ/A. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package.
Feature Summary
- Second-generation Field Stop IGBT technology for optimized performance
- Low saturation voltage and fast switching capabilities
- Positive temperature coefficient facilitating parallel operation
Applications
- Solar inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
- Power Factor Correction (PFC)
- Telecommunications power systems
- Energy Storage Systems (ESS)
Procurement Notes
Verify the specific suffix against official documentation to confirm automotive qualification status. Confirm RoHS compliance and packaging details directly with the manufacturer or authorized distributors before procurement. Ensure ordering information matches the exact part number variant required for the application.
Selection Notes
Select this component for designs requiring robust 600V switching with low conduction losses. Evaluate thermal management requirements based on the 349 W power dissipation rating. Consider the positive temperature coefficient for potential parallel configurations to increase current handling capacity in high-power applications.
Part Context
This device belongs to the FGH/FGB series of Field Stop IGBTs from onsemi (formerly Fairchild Semiconductor). These components are engineered to replace older standard IGBT technologies in applications demanding higher efficiency and reduced heat generation. The series is widely recognized for its reliability in industrial and renewable energy power conversion systems.
Replacement Considerations
Direct replacements may include the FGH40N60SMD or FGH40N60SM variants from the same manufacturer family. Verify pinout compatibility and electrical parameter tolerances when substituting. Cross-referencing with other manufacturers' 600V 40A Field Stop IGBTs requires careful validation of switching speeds and thermal resistance values.
