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The FGB40T65SPD-F085 is a Field Stop, Trench IGBT manufactured by onsemi. It features a 650 V collector-emitter voltage (VCES) and a continuous collector current of 40 A at 100°C case temperature. The device has a typical saturation voltage (VCE(sat)) of 2.0 V at IC = 40 A and VGE = 15 V. It includes a copackaged soft, fast recovery diode with a forward voltage of 2.0 V at IF = 20 A. Maximum power dissipation is 267 W at 25°C. The junction temperature range is -55 to +175°C, and it offers short circuit withstand time exceeding 5 µs at 25°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm that the component meets RoHS compliance and lead-free requirements as stated in the datasheet. Ensure the application environment stays within the specified thermal and electrical absolute maximum ratings to maintain reliability.
Select this component for automotive applications requiring high efficiency and ruggedness. Consider the 650 V blocking voltage and 40 A continuous current rating for system design. Evaluate the thermal resistance values for heat sink sizing. Verify gate drive requirements against the specified threshold and charge parameters.
This part belongs to the FGB series of Field Stop IGBTs from onsemi. It is designed specifically for automotive power electronics. The device integrates an IGBT and a diode in a single D2PAK-3 package. It targets high-volume automotive manufacturing standards.
Check for direct pin-compatible alternatives within the same manufacturer's portfolio. Verify that any substitute matches the 650 V rating, current capacity, and package dimensions. Ensure the replacement also holds AEC-Q101 qualification if required for the specific automotive application.
The short circuit withstand time exceeds 5 µs at a case temperature of 25°C.
Yes, the device features a positive temperature coefficient which allows for easy parallel operation.
The maximum operating junction temperature is 175°C.